page 1 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PHA-13HLN-D + 50 ? 1mhz to 1 ghz ultra high dynamic range the big deal ? ultra-high ip3, +43 dbm typ. ? medium power, +28.7dbm typ. ? excellent noise figure, 1.1 db typ. ? operates over +3 to +8v dc product overview PHA-13HLN-D+ (rohs compliant) is an advanced wideband amplifer die fabricated using e-phemt tech - nology and offers extremely high dynamic range over a broad frequency range and with low noise fgure. in addition, the PHA-13HLN-D+ has good input and output return loss over a broad frequency range. feature advantages broad band: 1mhz to 1 ghz broadband covering primary wireless communications bands: cellular, vhf, uhf extremely high ip3 38.4 dbm typical at 1mhz 43 dbm typical at 0.5ghz the PHA-13HLN-D+ matches industry leading ip3 performance relative to device size and power consumption. the combination of the design and e-phemt structure pro - vides enhanced linearity over a broad frequency range as evidence in the ip3 being approximately 15 db above the p1db point. this feature makes this amplifer ideal for use in: ? driver amplifers for complex waveform up converter paths ? drivers in linearized transmit systems ? secondary amplifers in ultra-high dynamic range receivers low noise figure: 1.1db at 0.5 ghz enables lower system noise fgure performance high p1db 28.7 dbm at 0.5 ghz high p1db, high oip3, low nf results in a very dynamic range preventing amplifer saturation under strong interfering signals. it can also be used to drive mixers requiring high drive unpackaged die enables the user to integrate the amplifer directly into hybrids key features monolithic amplifer die
page 2 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PHA-13HLN-D + 50 ? 1mhz to 1 ghz product features ? high ip3, 43 dbm typ. at 0.5ghz ? gain, 22.7 db typ. at 0.5ghz ? high pout, p1db 28.7 dbm typ. at 0.5ghz ? low noise fgure, 1.1 db at 0.5ghz ? operates over +3 to +8v dc rev. or m166553 PHA-13HLN-D+ wp/rs/cp 180320 general description PHA-13HLN-D+ (rohs compliant) is an advanced wideband amplifer die fabricated using e-phemt technology and offers extremely high dynamic range over a broad frequency range and with low noise fgure. in addition, the PHA-13HLN-D+ has good input and output return loss over a broad frequency range. typical applications ? base station infrastructure ? catv ? cellular ultra high dynamic range ordering information: refer to last page simplifed schematic and pad description bonding pad position note: 1. bond pad material - gold 2. bottom of die - gold plated dimensions in m, typical l1 l2 l3 l4 h1 h2 h3 h4 thickness pad#1 ground size pad#3 ground size rf in & rf out + dc pad 85.5 160.5 704.5 790 85.5 495.2 924.5 1010 100 240 x 90 230 x 90 90 x 290 pad# function description 2 rf-in rf input pad. this pad requires the use of an external dc blocking capacitor. 4 rf-out & dc-in rf output pad and bias pad. dc voltage is present on this pad, therefore, a dc blocking capacitor is necessary for proper operation. an rf choke is needed to feed dc bias without loss of rf signal due to the bias connection. 1,3 & bottom of die ground (gnd) ground rf-in rf-out and dc-in gnd monolithic amplifer die +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications h4 0 l1 l2 h2 l4 0 h1 h3 l3 1 2 3 4
page 3 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PHA-13HLN-D + electrical specifcations 1,2 at 25c, unless noted 1. measured on mini-circuits characterization test board. die packaged in industry standard sot-89 package and soldered on tb-969-13hln+. see characterization test circuit (fig. 1) 2. tested at pout= 0 dbm / tone. 3. (current at 85c current at -45c)/130 parameter at 8v at 3v&5v operating temperature (ground lead) -40c to 95c -40c to 105c power dissipation 5 3.3w 3.3w input power (cw) +21 dbm (5 minutes max) 6 +10 dbm (continuous) for 1-10 mhz +11 dbm (continuous) for 10-1000 mhz +21 dbm (5 minutes max) 6 +6 dbm (continuous) for 1-10 mhz +8 dbm (continuous) for 10-1000 mhz dc voltage on pad 4 10v 10v 4. permanent damage may occur if any of these limits are exceeded. electrical maximum ratings are not intended for continuous normal operation. 5. up to 85c, derate linearly to 2.5w at 95c. 6. up to 85c, derate linearly to +18 dbm at 95c. absolute maximum ratings 4 parameter condition (ghz) vd=8v 1 vd=5v 1 vd=3v 1 units min. typ. max. min. typ. max. frequency range 1 1000 1 1000 1-1000 mhz gain 1 25.0 24.6 23.7 db 20 24.3 24.0 23.3 250 23.0 22.8 22.1 500 22.7 22.4 21.5 1000 20.4 20.1 18.7 input return loss 1 10.8 10.3 9.4 db 20 15.8 15.4 14.6 250 16.7 17.5 17.9 500 17.5 17.4 14.7 1000 10.5 10.2 7.9 output return loss 1 11.2 11.3 11.0 db 20 18.8 19.1 21.5 250 17.7 17.7 20.2 500 29.4 23.9 20.0 1000 9.0 8.9 7.8 reverse isolation 500 26.3 26.1 25.7 db output power @1 db compression 1 26.2 21.3 15.1 dbm 20 27.3 23.0 16.9 250 28.4 24.4 19.5 500 28.7 24.5 19.5 1000 27.4 24.2 18.7 output ip3 2 1 38.4 37.0 30.6 dbm 20 41.7 40.2 33.3 250 43.5 40.2 33.4 500 43.0 39.0 32.3 1000 42.2 36.4 28.6 noise figure 1 3.0 3.1 3.0 db 20 1.2 1.2 1.1 250 1.1 0.9 0.9 500 1.1 1.0 1.0 1000 1.4 1.2 1.3 device operating voltage 8.0 5.0 3.0 v device operating current 234.1 138.9 71.2 ma device current variation vs. temperature 3 -100.6 21.7 30.3 a/c device current variation vs voltage 0.0155 0.0338 0.0338 ma/mv thermal resistance, junction-to-ground lead junction-to-ground lead at 85c stage temperature 23.3 23.3 23.3 c/w monolithic e-phemt mmic amplifer die
page 4 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PHA-13HLN-D + fig 1. block diagram of test circuit used for characterization. (dut, die packaged in sot-89 package, soldered on mini-circuits characterization test board tb-969-13hln+) gain, return loss, output power at 1db compression (p1 db) , output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain and return loss: pin= -25dbm. output ip3 (oip3): two tones, spaced 0.5 mhz apart, 0 dbm/tone at output. characterization test / recommended application circuit 2 4 monolithic e-phemt mmic amplifer die pha - 13hln+ monolithic e - phemt mmic amplifier mini - ci r cuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235 - 0003 (718) 934 - 4500 sales@minicircuits.com page 4 of 5 characterization test /recommended application circuit fig 1. block diagram of test circuit used for characterization. (dut soldered on mini - circuits characterization test board tb - 969- 13hln +) gain, return loss, output p ower at 1db compression (p1 db) , output ip3 (oip3) and noise figure measured using agilents n5242a pna - x microwave network analyzer. conditions: 1. gain and return loss: pin= - 25dbm 2. output ip3 (oip3): two tones, spaced 1 mhz apart, 0 dbm/ t one at output. product marking marking may contain other features or characters for internal lot control ph23
page 5 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PHA-13HLN-D + assembly diagram assembly and handling procedure 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic e-phemt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. monolithic e-phemt mmic amplifer die rf - in rf - out + dc - in ground
page 6 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PHA-13HLN-D + performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 5,10,50,100 kgd* medium ? , partial wafer: kgd*<1670 large ? , full wafer PHA-13HLN-Dg+ PHA-13HLN-Dp+ PHA-13HLN-Df+ ? available upon request contact sales representative refer to an-60-067 environmental ratings env80 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp d. mini-circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an as is basis, with all faults. e. purchasers of this part are solely responsible for proper storing, handling, assembly and processing of known good dice (including, without limitation, proper esd preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and mini-circuits assumes no responsibility therefor or for environmental effects on known good dice. f. mini-circuits and the mini-circuits logo are registered trademarks of scientifc components corporation d/b/a mini- circuits. all other third-party trademarks are the property of their respective owners. a reference to any third-party trademark does not constitute or imply any endorsement, affliation, sponsorship, or recommendation by any such third-party of mini-circuits or its products. esd rating** human body model (hbm): class 1b (pass 500v) in accordance with ansi/esd stm 5.1 - 2001 additional detailed technical information additional information is available on our dash board. *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. ** tested in industry standard sot-89 package. monolithic e-phemt mmic amplifer die
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